Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
Kushvaha, S. S., Kumar, M. Senthil, Maurya, K. K., Dalai, M. K., Sharma, Nita D.Volume:
3
Year:
2013
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4821276
File:
PDF, 1.22 MB
english, 2013