Low-temperature (350 °C) growth of AlGaAs/GaAs laser diode...

Journal of Applied Physics 1988 Vol. 64; Iss. 1

Low-temperature (350 °C) growth of AlGaAs/GaAs laser diode by migration enhanced epitaxy

Asai, M., Sato, F., Imamoto, H., Imanaka, K., Shimura, M.
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Volume:
64
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.341211
File:
PDF, 611 KB
english, 1988
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