Composition change of SiCx (x=1–2) films due to variation of film precursors in the Si2H6/C2H2 chemical vapor deposition reaction system
Hong, Lu-Sheng, Shimogaki, Yukihiro, Egashira, Yasuyuki, Komiyama, HiroshiVolume:
61
Year:
1992
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.107725
File:
PDF, 493 KB
english, 1992