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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
Gao, Fei, Lee, S. J., Li, Rui, Whang, S. J., Balakumar, S., Chi, D. Z., Kean, Chia Ching, Vicknesh, S., Tung, C. H., Kwong, D.-L.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346743
File:
PDF, 559 KB
english, 2006