Publisher's Note: “First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO[sub 2]–HfO[sub 2] stack” [J. Appl. Phys. 105, 061603 (2009)]
Broqvist, Peter, Alkauskas, Audrius, Godet, Julien, Pasquarello, AlfredoVolume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3134523
File:
PDF, 290 KB
english, 2009