A New Physical $\hbox{1}/f$ Noise Model for Double-Stack...

IEEE Electron Device Letters 2009 / 12 Vol. 30; Iss. 12

A New Physical $\hbox{1}/f$ Noise Model for Double-Stack High-$k$ Gate-Dielectric MOSFETs

Seung Hyun Song,, Hyun-Sik Choi,, Rock-Hyun Baek,, Gil-Bok Choi,, Min-Sang Park,, Kyung Taek Lee,, Hyun Chul Sagong,, Sang-Hyun Lee,, Sung Woo Jung,, Chang Yong Kang,, Yoon-Ha Jeong,
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2033721
Date:
December, 2009
File:
PDF, 243 KB
english, 2009
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