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[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal
Sonoda, Ken'ichiro, Ishikawa, Kiyoshi, Eimori, Takahisa, Tsuchiya, OsamuYear:
2006
Language:
english
DOI:
10.1109/sispad.2006.282851
File:
PDF, 3.83 MB
english, 2006