[IEEE 2006 International Conference on Simulation of...

  • Main
  • [IEEE 2006 International Conference on...

[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

Sonoda, Ken'ichiro, Ishikawa, Kiyoshi, Eimori, Takahisa, Tsuchiya, Osamu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2006
Language:
english
DOI:
10.1109/sispad.2006.282851
File:
PDF, 3.83 MB
english, 2006
Conversion to is in progress
Conversion to is failed