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Homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy
Murakami, Hisashi, Nomura, Kazushiro, Goto, Ken, Sasaki, Kohei, Kawara, Katsuaki, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu, MonemaVolume:
8
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.8.015503
Date:
January, 2015
File:
PDF, 2.59 MB
english, 2015