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Anomalous phosphorus diffusion in Si during post-implantation annealing
Kim, Ryangsu, Furuta, Yoshikazu, Hayashi, Syunsuke, Hirose, Tetsuya, Shano, Toshihumi, Tsuji, Hiroshi, Taniguchi, KenjiVolume:
78
Year:
2001
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1379359
File:
PDF, 243 KB
english, 2001