Surface modification of n-GaAs by 50 MeV silicon ions
Hullavarad, Shiva S., Railkar, T. A., Bhoraskar, S. V., Madukumar, P., Gokarna, A. S., Bhoraskar, V. N., Badrinarayanan, S., Pawaskar, N. R.Volume:
83
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.366922
File:
PDF, 354 KB
english, 1998