Structure of the 0.767-eV oxygen-carbon luminescence defect...

Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

Kürner, W., Sauer, R., Dörnen, A., Thonke, K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
39
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.39.13327
Date:
June, 1989
File:
PDF, 541 KB
english, 1989
Conversion to is in progress
Conversion to is failed