[IEEE 2013 IEEE International Electron Devices Meeting...

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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memories

Toledano-Luque, M., Degraeve, R., Roussel, Ph. J., Luong, V., Tang, B., Lisoni, J. G., Tan, C.-L., Arreghini, A., Van den bosch, G., Groeseneken, G., Van Houdt, J.
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Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724676
File:
PDF, 2.31 MB
english, 2013
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