High-electron-mobility AlGaN∕GaN heterostructures grown on...

High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy

Joblot, S., Semond, F., Cordier, Y., Lorenzini, P., Massies, J.

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Volume:

Year:

2005

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.2067698

File:

PDF, 423 KB

english, 2005

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