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Increased electron mobility in n-type Si-doped AlN by...

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki
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Volume:
89
Year:
2006
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2378726
File:
PDF, 504 KB
english, 2006
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