Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, ToshikiVolume:
89
Year:
2006
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2378726
File:
PDF, 504 KB
english, 2006