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Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerations
Comfort, James H., Garverick, Linda M., Reif, RafaelVolume:
62
Year:
1987
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.339301
File:
PDF, 1.15 MB
english, 1987