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Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions
Severac, Fabrice, Cristiano, Fuccio, Bedel-Pereira, Elena, Fazzini, Pier Francesco, Boucher, Jonathan, Lerch, Wilfried, Hamm, SilkeVolume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3446844
File:
PDF, 603 KB
english, 2010