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Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
Shiojiri, M., Chuo, C. C., Hsu, J. T., Yang, J. R., Saijo, H.Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2180532
File:
PDF, 829 KB
english, 2006