Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO[sub 2] blocking dielectric
Pei, Yanli, Yin, Chengkuan, Kojima, Toshiya, Nishijima, Masahiko, Fukushima, Takafumi, Tanaka, Tetsu, Koyanagi, MitsumasaVolume:
95
Year:
2009
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3189085
File:
PDF, 601 KB
english, 2009