Properties of the yellow luminescence in undoped GaN...

Physical Review B 1995 / 12 Vol. 52; Iss. 23

Properties of the yellow luminescence in undoped GaN epitaxial layers

Hofmann, D. M., Kovalev, D., Steude, G., Meyer, B. K., Hoffmann, A., Eckey, L., Heitz, R., Detchprom, T., Amano, H., Akasaki, I.
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Volume:
52
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.52.16702
Date:
December, 1995
File:
PDF, 229 KB
english, 1995
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