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Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and
Ono, Yukinori, Morizur, Jean-Francois, Nishiguchi, Katsuhiko, Takashina, Kei, Yamaguchi, Hiroshi, Hiratsuka, Kazuma, Horiguchi, Seiji, Inokawa, Hiroshi, Takahashi, YasuoVolume:
74
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.74.235317
Date:
December, 2006
File:
PDF, 908 KB
english, 2006