Top-gate thin-film transistors based on GaN channel layer

Applied Physics Letters 2012 Vol. 100; Iss. 2

Top-gate thin-film transistors based on GaN channel layer

Chen, Rongsheng, Zhou, Wei, Sing Kwok, Hoi
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Volume:
100
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3676447
File:
PDF, 704 KB
english, 2012
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