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Effects of a thin Al layer insertion between AlGaN and...

Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics

Nanjo, Takuma, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Tokuda, Yasunori
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Volume:
88
Year:
2006
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2168036
File:
PDF, 379 KB
english, 2006
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