Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics
Nanjo, Takuma, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Tokuda, YasunoriVolume:
88
Year:
2006
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2168036
File:
PDF, 379 KB
english, 2006