Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
Murphy, J. D., Bothe, K., Krain, R., Voronkov, V. V., Falster, R. J.Volume:
111
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4725475
File:
PDF, 1.09 MB
english, 2012