Dopant characterization of fin field-effect transistor...

Journal of Applied Physics 2007 Vol. 101; Iss. 3

Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

Khajetoorians, A. A., Li, J., Shih, C. K., Wang, X.-D., Garcia-Gutierrez, D., Jose-Yacaman, M., Pham, D., Celio, H., Diebold, A.
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Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2434000
File:
PDF, 913 KB
english, 2007
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