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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique
Kumar, E. N., Maheta, V. D., Purawat, S., Islam, A. E., Olsen, C., Ahmed, K., Alam, M. A., Mahapatra, S.Year:
2007
Language:
english
DOI:
10.1109/iedm.2007.4419071
File:
PDF, 1.01 MB
english, 2007