Roughening during XeF[sub 2] etching of Si(100) through...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2009 Vol. 27; Iss. 2

Roughening during XeF[sub 2] etching of Si(100) through interface layers: H:Si(100) and a-Si∕Si(100)

Stevens, A. A. E., van de Sanden, M. C. M., Beijerinck, H. C. W., Kessels, W. M. M.
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Volume:
27
Year:
2009
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.3085718
File:
PDF, 802 KB
english, 2009
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