Sequential injection of domain walls into ferroelectrics at...

Journal of Applied Physics 2014 / 08 Vol. 116; Iss. 6

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Whyte, J. R., McQuaid, R. G. P., Ashcroft, C. M., Einsle, J. F., Canalias, C., Gruverman, A., Gregg, J. M.
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4891347
Date:
August, 2014
File:
PDF, 2.93 MB
english, 2014
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