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[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Investigations on an Isolated Lateral High-Voltage n-channel LDMOS Transistor with a Typical Breakdown of 150V
Knaipp, Martin, Park, Jong, Vescoli, Verena, Roehrer, Georg, Minixhofer, RainerYear:
2006
Language:
english
DOI:
10.1109/essder.2006.307689
File:
PDF, 478 KB
english, 2006