Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition
Maeng, W. J., Lim, S. J., Kwon, Soon-Ju, Kim, H.Volume:
90
Year:
2007
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2472189
File:
PDF, 303 KB
english, 2007