New silicon-related deep broadband luminescence emission in...

Journal of Applied Physics 1988 Vol. 64; Iss. 1

New silicon-related deep broadband luminescence emission in Al0.3Ga0.7As epitaxial layers

Souza, P., Rao, E. V. K., Alexandre, F., Gauneau, M.
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Volume:
64
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.341216
File:
PDF, 779 KB
english, 1988
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