Vacancy-type defects induced by grinding of Si wafers...

Journal of Applied Physics 2014 / 10 Vol. 116; Iss. 13

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Uedono, Akira, Mizushima, Yoriko, Kim, Youngsuk, Nakamura, Tomoji, Ohba, Takayuki, Yoshihara, Nakaaki, Oshima, Nagayasu, Suzuki, Ryoichi
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4896829
Date:
October, 2014
File:
PDF, 887 KB
english, 2014
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