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Evaluation of structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method by Rutherford backscattering spectroscopy
Kobayashi, Takane, Iwaki, Masaya, Sakairi, Hideo, Aono, Masakazu, Inomata, YoshizoVolume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343419
File:
PDF, 625 KB
english, 1989