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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm
Sato, Motoyuki, Nakasaki, Yasushi, Watanabe, Koji, Aoyama, Tomonori, Hasegawa, Eiji, Koyama, Masato, Sekine, Katsuyuki, Eguchi, Kazuhiro, Saito, Masaki, Tsunashima, YoshitakaYear:
2006
Language:
english
DOI:
10.1109/iedm.2006.347008
File:
PDF, 277 KB
english, 2006