[IEEE 2006 International Electron Devices Meeting - San...

  • Main
  • [IEEE 2006 International Electron...

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

Sato, Motoyuki, Nakasaki, Yasushi, Watanabe, Koji, Aoyama, Tomonori, Hasegawa, Eiji, Koyama, Masato, Sekine, Katsuyuki, Eguchi, Kazuhiro, Saito, Masaki, Tsunashima, Yoshitaka
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.347008
File:
PDF, 277 KB
english, 2006
Conversion to is in progress
Conversion to is failed