Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory
Liu, Yueran, Tang, Shan, Banerjee, Sanjay K.Volume:
88
Year:
2006
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2202749
File:
PDF, 491 KB
english, 2006