Damage-free microwave-excited plasma etching without...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2008 Vol. 26; Iss. 1

Damage-free microwave-excited plasma etching without carrier deactivation of heavily doped Si under thin silicide layer

Goto, Tetsuya, Ikenaga, Kazuyuki, Teramoto, Akinobu, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, Tadahiro
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Volume:
26
Year:
2008
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.2804424
File:
PDF, 1.50 MB
english, 2008
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