Strain relaxation in GaN/AlxGa1-xN superlattices grown by...

Journal of Applied Physics 2011 Vol. 110; Iss. 3

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

Kotsar, Y., Doisneau, B., Bellet-Amalric, E., Das, A., Sarigiannidou, E., Monroy, E.
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Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3618680
File:
PDF, 2.53 MB
english, 2011
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