Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors
Jiang, J.Volume:
16
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581139
Date:
May, 1998
File:
PDF, 375 KB
english, 1998