[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - High-k MOSFET performance degradation by plasma process-induced charging damage — Impacts on device parameter variation
Eriguchi, Koji, Kamei, Masayuki, Takao, Yoshinori, Ono, KouichiYear:
2012
Language:
english
DOI:
10.1109/iirw.2012.6468925
File:
PDF, 412 KB
english, 2012