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[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - High-k MOSFET performance degradation by plasma process-induced charging damage — Impacts on device parameter variation

Eriguchi, Koji, Kamei, Masayuki, Takao, Yoshinori, Ono, Kouichi
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Year:
2012
Language:
english
DOI:
10.1109/iirw.2012.6468925
File:
PDF, 412 KB
english, 2012
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