Parallel stress and perpendicular strain depth...

Journal of Applied Physics 1989 Vol. 66; Iss. 10

Parallel stress and perpendicular strain depth distributions in [001] silicon amorphized by ion implantation

Fabbri, R., Servidori, M., Zani, A.
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Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343830
File:
PDF, 708 KB
english, 1989
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