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In0.2Ga0.8As single strained quantum well lasers with GaAs/AlGaAs short-period superlattice barrier layers grown by molecular beam epitaxy
Hayakawa, T., Matsumoto, K., Horie, H., Nagai, M., Morishima, M., Ishigame, Y., Isoyama, A.Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354274
File:
PDF, 594 KB
english, 1993