Photoluminescence of heavily Zn-doped Ga0.85In0.15As grown by low-pressure metalorganic vapor phase epitaxy
Benzaquen, R., Roth, A. P.Volume:
72
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.352190
File:
PDF, 1.10 MB
english, 1992