Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial...

Journal of Applied Physics 1993 Vol. 74; Iss. 2

Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate

Kim, Kun Ho, Kim, Do Hee, Nam, Sang Tack, Lee, Joung Ju, Kim, In Ho, Kim, Sung Chul, Lee, Jeong Yong, Nicolet, Marc-A., Bai, Gang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354951
File:
PDF, 1015 KB
english, 1993
Conversion to is in progress
Conversion to is failed