![](/img/cover-not-exists.png)
Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate
Kim, Kun Ho, Kim, Do Hee, Nam, Sang Tack, Lee, Joung Ju, Kim, In Ho, Kim, Sung Chul, Lee, Jeong Yong, Nicolet, Marc-A., Bai, GangVolume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354951
File:
PDF, 1015 KB
english, 1993