Surface kinetics and growth interruption in molecular-beam...

Journal of Applied Physics 1989 Vol. 65; Iss. 10

Surface kinetics and growth interruption in molecular-beam epitaxy of compound semiconductors: A computer simulation study

Ghaisas, S. V., Madhukar, A.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343350
File:
PDF, 658 KB
english, 1989
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