Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
Ruzmetov, Dmitry, Gopalakrishnan, Gokul, Ko, Changhyun, Narayanamurti, Venkatesh, Ramanathan, ShriramVolume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3408899
File:
PDF, 705 KB
english, 2010