[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs
Lee, Y.-H., Wu, K., Linton, T., Mielke, N., Hu, S., Wallace, B.Year:
2000
Language:
english
DOI:
10.1109/relphy.2000.843894
File:
PDF, 506 KB
english, 2000