[IEEE 2008 IEEE International Electron Devices Meeting...

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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼

Takeshi Sonehara,, Akira Hokazono,, Haruko Akutsu,, Tomokazu Sasaki,, Hiroshi Uchida,, Mitsuhiro Tomita,, Hideji Tsujii,, Shigeru Kawanaka,, Satoshi Inaba,, Yoshiaki Toyoshima,
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Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796851
File:
PDF, 1.20 MB
english, 2008
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