Charge trapping in nitrided HfSiO gate dielectric layers

Applied Physics Letters 2006 Vol. 89; Iss. 9

Charge trapping in nitrided HfSiO gate dielectric layers

Vellianitis, G., Rittersma, Z. M., Pétry, J.
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Volume:
89
Year:
2006
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2339049
File:
PDF, 259 KB
english, 2006
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