Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition
Xue, JunShuai, Hao, Yue, Zhang, JinCheng, Zhou, XiaoWei, Liu, ZiYang, Ma, JunCai, Lin, ZhiYuVolume:
98
Year:
2011
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3567529
File:
PDF, 567 KB
english, 2011