Evidence of silicon interdiffusion in selectively doped...

Journal of Applied Physics 1993 Vol. 74; Iss. 12

Evidence of silicon interdiffusion in selectively doped GaAs-AlAs superlattices by Hall measurements

Sellitto, P., Jeanjean, P., Sicart, J., Robert, J. L., Planel, R.
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Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.355033
File:
PDF, 1.08 MB
english, 1993
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