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[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures
Sen Huang,, Bo Shen,, Fujun Xu,, Fang Lin,, Zhenlin Miao,, Jie Song,, Lin Lu,, Zhixin Qin,, Zhijian Yang,, Guoyi Zhang,Year:
2008
Language:
english
DOI:
10.1109/icsict.2008.4734648
File:
PDF, 2.11 MB
english, 2008